Силовой модуль IGBT Toshiba MG75Q1JS43

N CHANNEL IGBT 75A 1200V Absolute maximum ratings: (1)collector-emitter voltage: 1200 V; (2)gate-emitter voltage: ±20 V; (3)collector current: 75 A; (4)forward current: 75 A; (5)collector power dissipation: 560 W; (6)junction temperature: 150 ℃; (7)storage temperature range: -40 to 125 ℃; (8)isolation voltage: 2500 V; (9)screw torque: 3/3 Nm. Features: (1)high input impedance; (2)high speed: tf=0.5μs Max, trr=0.5μs Max; (3)low saturation voltage: VCE(sat)=4.0 Max; (4)enhancement-mode; (5)the electrodes are isolated from case Подробнее