Транзистор N-Channel MOSFET, 25 A, 600 V, 3-Pin TO

Описание 1A37AB - 5 шт и 1A128X - 6 шт Описание Транзистор: N-MOSFET, полевой, 600В, 16А, Idm: 75А, 216Вт, TO247Semiconductors\Discrete Semiconductors\MOSFETs Технические параметры Channel ModeEnhancementChannel TypeNMaximum Continuous Drain Current25 AMaximum Drain Source Resistance126 mΩMaximum Drain Source Voltage600 VMaximum Gate Source Voltage-30 V, +30 VMaximum Operating Temperature+150 °CMaximum Power Dissipation216 WMinimum Gate Threshold Voltage2VMinimum Operating Temperature-55 °CMounting TypeThrough HoleNumber of Elements per Chip1Package TypeTO-247Pin Count3SeriesSupreMOSTransistor ConfigurationSingleTransistor MaterialSiTypical Gate Charge @ Vgs57 nC @ 10 VWidth4.82mmВес, г6.39 Подробнее